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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC2073 description collector-emitter breakdown voltage- :v (br)ceo = 150v(min) wide area of safe operation complement to type 2sa940 applications power amplifier applications. vertical output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current-continuous 1.5 a i b b base current-continuous 0.5 a collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2073 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 500ma; i b = 50ma 1.5 v v be (on) base-emitter on voltage i c = 500ma ; v ce = 10v 0.85 v i cbo collector cutoff current v cb = 120v ; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe dc current gain i c = 500ma ; v ce = 10v 40 140 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 35 pf f t current-gain?bandwidth product i c = 500ma; v ce = 10v 4 mhz isc website www.iscsemi.cn 2 |
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